Work

Performance Enhancement of InGaN Laser Photovoltaic Cell With AlGaN Strain Compensation Layer Irradiated by 450 nm Laser

Year: 2024

Type: article

Source: IEEE Journal of Photovoltaics

DOI: 10.1109/jphotov.2024.3495024

Authors: Heng-Sheng Shan, Yi-Xin Wang, Cheng-Ke Li, Ning Wang, Xiao-Ya Li, Shu-Fang Ma, Bing-She Xu

Institutions: Shaanxi University of Science and Technology, University of Shanghai for Science and Technology, Northwest University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Natural Science Foundation of Shanghai, National Natural Science Foundation of China, China Postdoctoral Science Foundation

Awards: 异质集成热电发生器热设计机理与能效增强方法研究, G9000109338, G961200604

OpenAlex ID: W4404628496

FWCI: 0.297

Cites: 34

Cited by: 2

Related to: 10