Work

Assessment of Leakage Current Reduction Techniques for Si-Stacked Nanosheet Transistor at 3-nm Node and Beyond

Year: 2024

Type: conference-paper

Source: Novel Intelligent and Leading Emerging Sciences Conference (NILES)

DOI: 10.1109/niles63360.2024.10753173

Authors: Mohamed Saleh, Hamdy Abdelhamid, Amr M. Bayoumi

Institutions: Zewail City of Science and Technology, Ajman University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404628671

FWCI:

Cites: 9

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Related to: 10