Work

Impact Analysis of Control Frequency Variations Using SI MOSFETs and SIC IGBTs in Boost Converter

Year: 2024

Type: conference-paper

Abstract: This article aims to conduct a comparative study between different types of MOSFETs based on silicon (Si) and IGBTs based on silicon carbide (SiC). Specifically, three MOSFETs (IRF530, IRF630, IRF730) and one IGBT (APT25GF100BN) were analyzed. The study evaluates characteristics such as VDSand VCEvoltages, current during transistor turn-on and turn-off, and examines the impact of varying the frequency of the control signal. Transient process data during activation and deactivation were simulated using LTspice software. The analysis focused on their application in a static boost converter to determine conducted emissions in common mode and differential mode. Results indicate that the choice of MOSFET and the switching frequency significantly influence electromagnetic interference (EMI) noise levels.

DOI: 10.1109/epei63510.2024.10758091

Authors: Abdelhakim Zeghoudi, Dorin Lucache, Abdelber Bendaoud, Laurent Canale

Institutions: Université Djilali de Sidi Bel Abbès, Gheorghe Asachi Technical University of Iași, Centre National de la Recherche Scientifique, Laboratoire Plasma et Conversion d'Energie

Language: English

Topic: Electromagnetic Compatibility and Noise Suppression

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4404628829

FWCI:

Cites: 12

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Related to: 10