Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates
Year: 2024
Type: article
Source: Advanced Materials Technologies
Authors: Christoph Beyer, Niladri Bhattacharjee, Thomas Mikolajick, Jens Trommer
Institutions: NaMLab (Germany), Technische Universität Dresden
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W4404642318