Work

Optimization of growth conditions for direct synthesis of SnSe2 thin films via improved atmospheric pressure chemical vapor deposition

Year: 2024

Type: article

Abstract: In this study, high-quality tin diselenide (SnSe 2 ) thin films were successfully synthesized using an optimized atmospheric pressure chemical vapor deposition (APCVD) technique. Precise control over key growth parameters, such as substrate temperature and deposition time , enabled the realization of films exhibiting exceptional crystallographic and optical properties . Notably, the growth temperature was found to significantly influence the SnSe 2 film morphology. Under the optimal conditions (250 °C growth temperature and 90 min of deposition), the films exhibited a strong (001) crystal orientation , 24.6 % transmittance , an optical bandgap of 1.55 eV, and an optical thickness of approximately 386.19 nm. Additionally, the films demonstrated N-type semiconductor behavior, making them highly suitable for use in electronic and optoelectronic applications . This study provides valuable insights for the large-scale production of high-performance SnSe 2 thin films suitable for electronic and optoelectronic applications.

Source: Optical Materials

DOI: 10.1016/j.optmat.2024.116467

Authors: Baoqi Wu, Zhihao Wang, Zhanshou Wang, Jianyuan Yu, Hongli Zhao

Institutions: Yanshan University, State Key Laboratory of Metastable Materials Science and Technology

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,510

Funders: Innovative Research Group Project of the National Natural Science Foundation of China, National Natural Science Foundation of China