Work

A comparison of formulations and non-linear solvers for computational modelling of semiconductor devices

Year: 2024

Type: article

Abstract: The drift-diffusion formulation, modelling semiconductor materials in terms of carrier densities and electric potential, is considered together with an alternative formulation in terms of dimensionless logarithmic quantities. Stability of both formulations in presence of sharp variations with a Galerkin Finite Element discretisation is assessed in two realistic problems: a p - n junction and an n -MOSFET device. The robustness with respect to the initial guess and the computational efficiency of the Newton-Raphson and Gummel non-linear solvers are also compared.

Source: Computational Mechanics

DOI: 10.1007/s00466-024-02578-x

Authors: Sergi Pérez-Escudero, David Codony, Irene Arias, Sonia Fernández-Méndez

Institutions: Universitat Politècnica de Catalunya, International Center for Numerical Methods in Engineering

Language: English

Topic: Advanced Numerical Methods in Computational Mathematics

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,790