Work

Ferroelectric Perovskite/MoS 2 Channel Heterojunctions for Wide‐Window Nonvolatile Memory and Neuromorphic Computing

Year: 2024

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202414339

Authors: Haojie Xu, Fapeng Sun, Enlong Li, Wuqian Guo, Lina Hua, Ruixue Wang, Wenwu Li, Junhao Chu, Wei Liu, Junhua Luo, Zhihua Sun

Institutions: Chinese Academy of Sciences, Fujian Institute of Research on the Structure of Matter, University of Chinese Academy of Sciences, State Key Laboratory of Structural Chemistry, Fudan University, Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Fujian Province, National Key Research and Development Program of China, Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China

Awards: G1437488446, G1917077900, G2102205337, G2335151943, G4579476559, G4603345411, G5220165399, G5336274414, G5369064109, G5633921882, G5727840858, G572784238, G6270670032, G6930208285, G8794898631

OpenAlex ID: W4404656955

FWCI: 4.102

Cites: 45

Cited by: 40

Related to: 10