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Ordered Vacancy Compound Formation at the Interface of Cu(In,Ga)Se2 Absorber with Sputtered In2S3‐Based Buffers: An Atomic‐Scale Perspective
Work
Year: 2024
Type: article
Abstract: The design of a Cd‐free and wider‐bandgap buffer layer is stringent for future Cu(In,Ga)Se 2 (CIGSe) thin‐film solar cell applications. For that, an In 2 S 3 buffer layer alloyed with a limited amount... more
Source: Solar RRL
Cites: 56
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Related to: 10
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Open Access status: hybrid
APC paid (est): $4,020