Work

From nanosphere lithography to localised heteroepitaxy of GaAs on Si

Year: 2024

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Dentz, L., Hamouda, F., Hallais, G., Vincent, L., Herth, E., Baptiste, T., Leroy, L., Largeau, L., Bouchier, D., Jaffré, Alexandre, Connolly, James P., Mencaraglia, Denis, Renard, Charles

Institutions: Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, Laboratoire de Génie Électrique et Électronique de Paris

Language: English

Topic: Nanofabrication and Lithography Techniques

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4404686446

FWCI:

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