Work

Interface Optimization and Temperature Reliability Estimation of ErₓYyO/Si Gate Stacks by ALD-Derived AlN Passivation Layer

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3499948

Authors: Li Cheng, Gang He, Can Fu, Shanshan Jiang, Zebo Fang

Institutions: Anhui University, Shaoxing University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G539474978, 高k栅介质/金属栅锑化镓MOS器件中的关键物理问题研究

OpenAlex ID: W4404688607

FWCI:

Cites: 29

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