Highly Robust All-Oxide Transistors Toward Vertical Logic and Memory
Year: 2024
Type: article
Authors: Zehao Lin, Zhuocheng Zhang, Chang Niu, Hongyi Dou, Ke Xu, Mir Md Fahimul Islam, Jian-Yu Lin, Changhyuck Sung, Minji Hong, Daewon Ha, Haiyan Wang, Muhammad Ashraful Alam, Peide. D. Ye
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Samsung
OpenAlex ID: W4404688671