Exploring the Potential of Hafnium Oxide-Based Ferroelectric Memories for Next-Generation Storage Class Memories
Year: 2025
Type: conference-paper
Abstract: Hafnium oxide ($\text{HfO}_{2}$) -based ferroelectric memories are emerging as appealing candidates for storage class memory (SCM) applications due to their scalability, low energy consumption, and compatibility with complementary-metal-oxide-semiconductor (CMOS) technology. Their strong ferroelectric properties at nanoscale thicknesses make them suitable for high-density memory, effectively bridging the gap between volatile and non-volatile storage. Key factors influencing their performance include the selection of dopants, the quality of the interfaces, defect management, and overall reliability, all of which impact endurance, retention, and the device's stability.
Author: Sourav De
Institution: National Tsing Hua University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4404689972