Investigating Structural and Surface Modifications in Ion-Implanted 4H-SiC for Enhanced Dopant Distribution Analysis in Power Semiconductors
Year: 2024
Type: article
Abstract: This study aims to develop a reference material that enables precise management of dopant distribution in power semiconductors. We thoroughly investigate the structural and surface properties of 4H-silicon carbide (4H-SiC) single crystals implanted without annealing using aluminum (Al) and phosphorus (P) ions. Ion-implanted 4H-SiC was thoroughly evaluated using advanced techniques, including X-ray diffraction (XRD), field emission transmission electron microscopy (FE-TEM), atomic force microscopy (AFM), time of flight medium energy ion scattering (ToF-MEIS), and secondary ion mass spectrometry (SIMS). The evaluated results indicate that, without post-annealing, ion-implanted 4H-SiC can serve as an effective reference material for the precise control of trace elements and the quantitative monitoring of dopant distribution in power semiconductor applications.
Source: Materials
DOI: 10.3390/ma17235734
Authors: Taehun Jang, Mirang Byeon, Minji Kang, Sang-Gil Lee, Ji Hyun Lee, Sang-Geul Lee, Won Ja Min, Tae Eun Hong
Institutions: Korea Basic Science Institute, Pusan National University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,955
Award: G2484755369
OpenAlex ID: W4404695797