Work

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Year: 2024

Type: article

Abstract: Modern semiconductor devices, such as gate-all-around nanosheet field-effect transistors (GAA NS FETs), are smaller than displacement damage cascades from fission neutrons. In this regime, device failure may occur through low-probability single events, rather than by parametric degradation previously seen in larger devices. Here, we present a statistical model that predicts the probability of a damage event in a small device and the probability distribution of the magnitude, i.e., number of displacements within the device, from each event. The model is developed first for neutron irradiation and then for energetic ion irradiation. The model is consistent with results from recent experiments in which lithium-ion irradiation produced stepwise increases in subthreshold current in GAA NS FETs.

Source: Journal of Applied Physics

DOI: 10.1063/5.0237175

Authors: W. R. Wampler, G. Vizkelethy, M. Titze

Institution: Sandia National Laboratories

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: Sandia National Laboratories