253 GHz fT Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications
Year: 2024
Type: article
Source: physica status solidi (a)
Authors: S. Angen Franklin, Binola K. Jebalin I. V., Subhash Chander, Sylvia Juliet Rani, D. Nirmal
Institutions: Karunya University, Solid State Physics Laboratory
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: G7276995985
OpenAlex ID: W4404731197