Work

Layered NbS 2 contacts formed via H 2 S reaction with Nb for high-performance WSe 2 -channel p-type transistors

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad974d

Authors: Koki Hori, Wen Hsin Chang, Toshifumi Irisawa, Atsushi Ogura, Naoya Okada

Institutions: Meiji University, National Institute of Advanced Industrial Science and Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: 二次元物質とシリコンを用いたヘテロエレクトロニクスの創出

OpenAlex ID: W4404734422

FWCI: 0.288

Cites: 35

Cited by: 3

Related to: 10