Work

Retention Improvement in Vertical NAND Flash Memory Using Electron Back-Tunneling

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3506507

Authors: Sung-Ho Park, Ho-Nam Yoo, Jong-Won Back, Joonhyung Cho, Yeongheon Yang, Jiseong Im, Ryun-Han Koo, Jonghyun Ko, Jong-Ho Lee

Institutions: Seoul National University, SK Hynix (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: SK Hynix, Seoul National University, Ministry of Science and ICT, South Korea

Award: G6334847208

OpenAlex ID: W4404742928

FWCI: 1.654

Cites: 15

Cited by: 16

Related to: 10