Work

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T′-MoTe2

Year: 2024

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c15216

Authors: Enzi Chen, Qing Zhu, Yaoyu Duan, Junhao Tang, Runze Zhan, Jingwen Huang, Xi Wan, Kun Chen, Shaozhi Deng

Institutions: Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology, Jiangnan University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Guangdong Provincial Pearl River Talents Program, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G494670717, G6919588700, G7644198963

OpenAlex ID: W4404766149

FWCI: 0.672

Cites: 64

Cited by: 7

Related to: 10