Work

Layer-dependent Schottky contact at TaX 2 –BY (X = S, Se, Te; Y = P, As, Sb) van der Waals interfaces

Year: 2024

Type: article

Abstract: The mechanical, thermal and dynamical stabilities, electronic structure, contact type, and height of the barrier at the interface of TaX 2 (X = S, Se, Te) and BY (Y = P, As, Sb) metal–semiconductor (MS) contact are investigated .

Source: Nanoscale Advances

DOI: 10.1039/d4na00688g

Authors: Israr Ul Haq, A. Mustaqeem, B. Ali, M. Umair Ashraf, U. Khan, Muhammad Idrees, M. Shafiq, Yousef Mohammed Alanazi, B. Amin

Institutions: Abbottabad University of Science and Technology, University of Science and Technology Beijing, Jiangsu University, King Saud University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

Funders: King Saud University, Jiangsu University

Award: G6776500568

OpenAlex ID: W4404772013

FWCI: 0.57

Cites: 82

Cited by: 6

Related to: 10