Work

High-Yield Enhancement-Mode GaN p-FET With Etching-Target Layer and High-Selectivity Etching Techniques

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3493056

Authors: Xuanming Zhang, Yuanlei Zhang, Jiachen Duan, Zhiwei Sun, Weisheng Wang, Ye Liang, Xuelin Yang, Lisheng Zhang, Zhenghao Chen, Jie Zhang, Kain Lu Low, Wen Liu

Institutions: Xi’an Jiaotong-Liverpool University, Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1255505704, G3927197278, G3993252122

OpenAlex ID: W4404788855

FWCI: 2.378

Cites: 24

Cited by: 16

Related to: 10