Comparison of Total Ionizing Dose Effects Between Double and Conventional SOI Devices
Year: 2024
Type: article
Authors: Siyuan Chen, Jiangjiang Li, Fanyu Liu, Bo Li, Yuchong Wang, Huiping Zhu, Yang Huang, Lei Shu, Duoli Li, Gang Zhang, Fang Wang, Yinuo Zhang, Jiajia Wang, Baogang Sun, Yuxin Sun, Weier Lu, Xinyi Zhang, Binhong Li, Tianchun Ye
Institutions: Chinese Academy of Sciences, Institute of Microelectronics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404789005