Work

A Ku-Band Fully Differential Low-Power High-Input P1dB Low-Noise Amplifier

Year: 2024

Type: article

Abstract: This paper introduces a Ku-band fully differential low-power high-input 1 dB compression point (P1dB) low-noise amplifier (LNA). A fully differential structure is employed to enhance the input P1dB, common-mode noise rejection, and second harmonic cancellation. The first stage adopts large transistors and is optimized for power consumption and noise figure (NF). The output stage is designed with class AB bias, resulting in improved P1dB, power consumption, and linearity. The proposed two-stage fully differential common-source (CS) LNA was implemented using 65 nm bulk complementary metal oxide semiconductor (CMOS) technology. The fabricated LNA achieved a minimum NF of 2.7 dB at 13.6 GHz. Furthermore, it achieved a maximum gain of 19.92 dB at 12.2 GHz. Additionally, the LNA has an input P1dB of -7.45 dBm and an output power 1 dB compression point (OP1dB) of 10.09 dBm, both measured at 15.6 GHz. The LNA operates with a power consumption of 11 mW at a 1 V supply, and occupies a core size of 0.75 mm × 0.35 mm.

Source: Nanomaterials

DOI: 10.3390/nano14231913

Authors: Sang-Rok Lee, Joon-Hyung Kim, Min-Seok Baek, Choul-Young Kim

Institutions: Chungnam National University, Korea Aerospace Research Institute

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,296

Funders: Ministry of Trade, Industry and Energy, Iran Telecommunication Research Center, Ministry of Science and ICT, South Korea, Institute for Information and Communications Technology Promotion