Low-Temperature Bonding for Heterogeneous Integration of Silicon Chips with Nanocrystalline Diamond Films
Year: 2024
Type: article
Abstract: Integrating nanocrystalline diamond (NCD) films on silicon chips has great practical significance and many potential applications, including high-power electronic devices, microelectromechanical systems, optoelectronic devices, and biosensors. In this study, we provide a solution for ensuring heterogeneous interface integration between silicon (Si) chips and NCD films using low-temperature bonding technology. This paper details the design and implementation of a magnetron sputtering layer on an NCD surface, as well as the materials and process for the connection layer of the integrated interface. The obtained NCD/Ti/Cu composite layer shows uniform island-like Cu nanostructures with 100~200 nm diameters, which could promote bonding between NCD and Si chips. Ultimately, a heterogeneous interface preparation of Si/Ag/Cu/Ti/NCD was achieved, with the integration temperature not exceeding 250 °C. The TEM analysis shows the closely packed atomic interface of the Cu NPs and deposited Ti/Cu layers, revealing the bonding mechanism.
Source: Micromachines
DOI: 10.3390/mi15121436
Authors: Jicun Lu, Xiaochun Lv, Chenghao Zhang, Chenghao Zhang, Chuting Zhang, Chuting Zhang, Yang Liu
Institution: Harbin University of Science and Technology
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,955
OpenAlex ID: W4404821672