Work

High Frequency and High Gain Split-Gate Monolayer MoS2 Field Effect Transistor for Common Source Amplifier Circuit

Year: 2024

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c01492

Authors: Xiaojie Tang, Xueping Li, Zhuojun Wang, Peize Yuan, Chenhai Shen, Jianye Wang, Congxin Xia

Institutions: Henan Normal University, Henan Academy of Sciences

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Henan Province Foundation for University Key Teacher

Awards: G1933973844, G7756321186, G8124767047, G8369789485

OpenAlex ID: W4404824425

FWCI:

Cites: 48

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Related to: 10