Work

A 28-nm 10.4-fJ/b Cryogenic embedded DRAM with 3T1C Gain Cell and MBIST at 4-Kelvin

Year: 2024

Type: conference-paper

Source: International SoC Design Conference

DOI: 10.1109/isocc62682.2024.10762394

Authors: Jiapei Zheng, Xinkai Nie, Zhenghang Zhi, Zhidong Tang, Qi Liu, Xufeng Kou, Chixiao Chen

Institutions: Fudan University, ShanghaiTech University

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4404849571

FWCI: 0.806

Cites: 5

Cited by: 1

Related to: 10