Precise measurement of the 7Be electron capture decay half-life in silicon carbide
Year: 2024
Type: article
Abstract: In this work we present to our knowledge the most precise measurement of the 7Be electron capture decay half-life in a host material. A silicon carbide sample with ~8.62 × 109 7Be atoms was measured for 83.5 d on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso, Italy. The result obtained for the decay half-life is T 1/2 = 53.284 ± 0.016 d, which corresponds to an uncertainty of 0.3‰. Thanks to the high sensitivity achieved, this measurement is paving the way to further investigations on this process aiming to understand how environmental conditions may affect the decay half-life.
Institutions: University of Campania "Luigi Vanvitelli", Istituto Nazionale di Fisica Nucleare, Sezione di Napoli, Istituto Nazionale di Fisica Nucleare, Istituto Nazionale di Fisica Nucleare, Sezione di Roma I, University of Salerno, Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Gran Sasso
Language: English
Subfield: Radiation
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,165
OpenAlex ID: W4404874211