Work

Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad98b7

Authors: Yipin Gao, Wentao Tian, Ying Qi, Shuti Li, Chao Liu

Institutions: Shandong University, State Key Laboratory of Crystal Materials, South China Normal University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shandong Province, National Key Research and Development Program of China, Science and Technology Planning Project of Guangdong Province, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G2699931331, G4753993084, G652925818, G8394673485, G8590225944

OpenAlex ID: W4404874261

FWCI: 0.578

Cites: 53

Cited by: 4

Related to: 10