A high-performance capacitorless 1T-DRAM based on Z-shaped electron-hole bilayer TFET and SiGe memory window
Year: 2024
Type: article
Source: Physica Scripta
Authors: Hu Liu, Xiaoyu Zhou, Yubin Li, Peifeng Li, Lei Pan, Pengyu Wang
Institution: Lanzhou Jiaotong University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G199324451
OpenAlex ID: W4404942785