Work

Oxidation temperature influence on the properties of oxide layers thermally grown on 4H-SiC by wet oxidation

Year: 2024

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/ad9a16

Authors: G H S Dartora, C Radtke, F C Stedile

Institution: Universidade Federal do Rio Grande do Sul

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul

OpenAlex ID: W4404944884

FWCI: 0.104

Cites: 22

Cited by: 1

Related to: 10