Work

Doping of porous activated carbon with Er, a metal with a high electronic states density

Year: 2024

Type: article

Abstract: The effect of doping porous carbon material (PCM) with erbium, as a metal with a high density of electronic states, on the electrochemical properties of PCM was investigated. It was established that the optimal concentration of introduced erbium 0.2% leads to a significant increase in specific capacity for the devices formed on the basis of erbium-doped carbon material. And the doping of PCM with both erbium (0.2 wt.%) and copper (0.1 wt.%) results not only in the specific capacity increase but also lowers total system impedance.

Source: Physics and Chemistry of Solid State

DOI: 10.15330/pcss.25.4.782-786

Authors: I.M. Budzuliak, L.S. Yablon, V.O. Kotsiubynskyi, I.I. Budzuliak, R.V. Ilnytskyi, A.I. Hlubitskyi, N.R. Ilnytskyi

Institutions: Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk National Medical University

Language: English

Topic: Supercapacitor Materials and Fabrication

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4404945709

FWCI: 0.077

Cites:

Cited by: 1

Related to: 10