Work

Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3508669

Authors: Dun-Bao Ruan, Kuei-Shu Chang-Liao, Huan Wu, Fu-Yang Chu, Po-Chun Wu, Zefu Zhao, Kai-Jhih Gan

Institutions: Fuzhou University, National Tsing Hua University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1606589457

OpenAlex ID: W4404952795

FWCI: 0.312

Cites: 37

Cited by: 3

Related to: 10