Year: 2024
Type: article
Abstract: This work demonstrates an enhancement mode heterojunction bipolar p-FET (HEB-PFET) structure with a AlGaN/GaN heterojunction bipolar transistor (HBT) integrated on the drain side. Such device design notably contributes to the ultra-high output current density, which is conventionally limited by the low hole mobility and concentration in the p-FETs. The HEB-PFET exhibits an output current density of 241 mA/mm, which is 134 times larger compared to the conventional p-FET (C-PFET) and 2.4 times of the homojunction bipolar p-FET (HOB-PFET). This can be attributed to a better current gain of HBT than homojunction bipolar transistor (BJT). An optimized HEB-PFET of 6 nm p-GaN layer beneath the gate is proposed, where ION/IOFF is >1011, and Vth is −0.44 V. Additionally, thermal stabilities are studied with temperature changes from 300 K to 425 K. Moreover, a semi-empirical compact model is presented to visually explain the working principle of the HEB-PFET.
Source: Electronics
Authors: Wenqian Zhang, Mei Ge, Yi Li, Shuxin Tan, Chenhui Yu, Dunjun Chen
Institutions: Nantong University, Nanjing University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,728
OpenAlex ID: W4404970356