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Mechanism of Indium Redistribution and Thermal Degradation in InGaN/(In)GaN Quantum Wells of Vertical Cavity Surface Emitting Lasers

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Year: 2024
Type: article
Source: Crystal Growth & Design
DOI: 10.1021/acs.cgd.4c01270
Authors: Yachen Wang, Feng Liang, Jing Yang, Ping Chen, ZongShun Liu, Degang Zhao
Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences
Language: English

Topic: GaN-based semiconductor devices and materials
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China
Awards: G1162846956, G1756845626, G2448729015, G3036932515, G3559995276, G4487040938, G6030225121, G6778801559, G6949709843, G7575456791, G8002630593, G8753185681
OpenAlex ID: W4405006315
FWCI: 0.297
Cites: 32
Cited by: 2
Related to: 10
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