Work

On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector

Year: 2024

Type: article

Abstract: The advantages of on-chip integrated photodetectors , such as miniaturization, high integration, and reliability, make them an indispensable and important part of electronic devices and systems. Herein, we experimentally exhibited a monolithically integrated ultraviolet photodetector utilizing GaN microcylinder epitaxial structure on Si wafer , with its photoresponse properties plasmonically boosted using Pt nanoparticles via specific sizes. When illuminated upon ultraviolet light at 0 V bias, the Pt/GaN device exhibits significant photovoltaic performances , including a peak responsivity of 200.1 mA W −1 , external quantum efficiency of 65%, and other figures-of-merit. Finite element analysis and energy band theory confirm that the excellent photodetection properties of the Pt/GaN device are related to the strong plasmon absorption and the increase of hot electrons injected into the GaN conduction band , which considerably improves its photoresponse performance and robustness in application. To realize the multipurpose capability of the devices, we validated the application of Pt/GaN as turbidity sensing and achieved a resolution of up to 100 NTU. Moreover, the prepared devices can be used as optical data receivers for optical communication . These findings provide references for on-chip detectors to improve the overall system performance and promote the realization of more complex applications.

Source: Chip

DOI: 10.1016/j.chip.2024.100118