Nonvolatile electrochemical memory at 600°C enabled by composition phase separation
Year: 2024
Type: article
Abstract: Silicon-based microelectronics are limited to ∼150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.
Source: Device
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $9,350
Funders: National Science Foundation, U.S. Department of Energy, National Nuclear Security Administration, Michigan Center for Materials Characterization, University of Michigan, Division of Computing and Communication Foundations, Division of Electrical, Communications and Cyber Systems, Laboratory Directed Research and Development, Sandia National Laboratories
OpenAlex ID: W4405010826