Work

Asymmetric Trench SiC MOSFET With Integrated Three Channels for Improved Performance and Reliability

Year: 2024

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3510782

Authors: Weizhong Chen, Yangqi Zhou, Yufan Xiao, Hongsheng Zhang, Yi Huang, Zhengsheng Han

Institutions: Chongqing University of Posts and Telecommunications, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Chongqing Municipal Education Commission

Awards: G4456837855, G7870848524, G8315956571

OpenAlex ID: W4405022327

FWCI: 0.416

Cites: 22

Cited by: 4

Related to: 10