Work

Confinement and Threshold Modeling for High Temperature GeSn and GeC/GeCSn Lasers

Year: 2024

Type: article

Source: IEEE Journal of Selected Topics in Quantum Electronics

DOI: 10.1109/jstqe.2024.3511716

Authors: Md. Shamim Reza, Tuhin Dey, Augustus W. Arbogast, Qian Meng, Seth R. Bank, Mark A. Wistey

Institutions: Texas State University, Lam Research (United States), The University of Texas at Austin

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, University of Texas at Austin, Air Force Office of Scientific Research

Awards: SusChEM: Direct Bandgap Ge:C on Silicon for Optoelectronics, Core-shell Upconverting Nanostructures (CSUNs) for Photovoltaics, TxState-UT PREM Center for Intelligent Materials Assembly (CIMA), Influence of Solute Incorporation Mechanisms on the Properties of Highly Mismatched Alloys, G7396664146, G7698605067

OpenAlex ID: W4405022440

FWCI:

Cites: 89

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Related to: 10