Work

Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED

Year: 2024

Type: conference-paper

DOI: 10.1117/12.3051934

Authors: Wagma Hidayat, Muhammad Usman, Syeda Wageeha Shakir, Anum ., Iqra Anjum, Shazma Ali, Laraib Mustafa

Institution: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405031573

FWCI: 2.318

Cites: 17

Cited by: 2

Related to: 10