Work

High output InGaN red laser diodes through implementation of AlGaInN interlayer

Year: 2024

Type: conference-paper

DOI: 10.1117/12.3052373

Authors: Laraib Mustafa, Muhammad Usman, Shazma Ali, Anum Ali, Jamshad Bashir, Wagma Hidayat, Syeda Wajeeha Shakir, Iqra Anjum

Institution: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405031585

FWCI:

Cites: 11

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Related to: 10