Wide‐Bandgap Perovskite‐Inspired Materials: Defect‐Driven Challenges for High‐Performance Optoelectronics (Adv. Funct. Mater. 50/2024)
Year: 2024
Type: article
Abstract: Wide-Bandgap Perovskite-Inspired Materials In article number 2307441, Paola Vivo and co-workers discuss perovskite-inspired materials (PIMs), a low-toxicity alternative to lead halide perovskites, which are characterized by a high concentration of defects within their wide bandgaps, which limits their performance in optoelectronic devices. Understanding the complex defect chemistry of PIMs is essential for healing and mitigating these defects. This, in turn, will enhance the potential of PIM-based semiconductors for commercialization.
Source: Advanced Functional Materials
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4405085400
