Work

3 kV monolithic bidirectional GaN HEMT on sapphire

Year: 2024

Type: article

Abstract: 3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors was ∼20 Ω.mm (∼11 mΩ.cm2). The breakdown voltage was optimized with two field plates on either side of the transistor. Shorter first field plate lengths (≤2 μm) resulted in higher breakdown voltage and the possible reason was discussed. The transistors had a steep subthreshold swing of 92 mV dec−1. The fabricated transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage—on resistance, that showed crucial progress.

Source: Applied Physics Express

DOI: 10.35848/1882-0786/ad9b6a

Authors: Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

Institution: University of Wisconsin–Madison

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,250

Funders: National Science Foundation, Division of Electrical, Communications and Cyber Systems