Optimization of JFET region for 1.2kV SiC HEXFETs with 3D TCAD Simulations
Year: 2024
Type: conference-paper
Institution: University at Albany, State University of New York
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4405103399
