Work

Design of a 650V Full-Bridge GaN Module with Integrated Gate Driver and Decoupling Capacitors

Year: 2024

Type: conference-paper

DOI: 10.1109/wipda62103.2024.10773380

Authors: Subhransu Satpathy, Partha Pratim Das, Subhashish Bhattacharya, Rayna Alizadeh, Richard Eddins

Institution: North Carolina State University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4405103863

FWCI: 1.557

Cites: 10

Cited by: 2

Related to: 10