Work

Evaluation of 1.2-kV Rated SiC Trench MOSFETs Under High-Voltage Switching Impulses

Year: 2024

Type: conference-paper

DOI: 10.1109/wipda62103.2024.10773384

Authors: Hengyu Yu, Michael Jin, Nikhil Bhardwaj, Limeng Shi, Monikuntala Bhattacharya, Jiashu Qian, Shiva Houshmand, Tianshi Liu, Atsushi Shimbori, Marvin H. White, Anant K. Agarwal

Institutions: The Ohio State University, Ford Motor Company (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ford Motor Company

OpenAlex ID: W4405103952

FWCI: 1.562

Cites: 16

Cited by: 2

Related to: 10