Work

Impact of Gate Switching Instability in SiC MOSFETs Application Performance Degradation During Hard Switching Conversion

Year: 2024

Type: conference-paper

DOI: 10.1109/wipda62103.2024.10773320

Authors: Andrea Piccioni, Maximilian W. Feil, Thomas Aichinger

Institution: Infineon Technologies (Austria)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405103995

FWCI: 5.642

Cites: 11

Cited by: 7

Related to: 10