Work

Methodology for Determining Critical Screening Voltage in SiC MOSFETs Through Gate Leakage Current Hysteresis

Year: 2024

Type: conference-paper

DOI: 10.1109/wipda62103.2024.10773284

Authors: Nikhil Bhardwaj, Shiva Houshmand, Hengyu Yu, Monikuntala Bhattacharya, Michael Jin, Limeng Shi, Jiashu Qian, Sandeep Anand, Atsushi Shimbori, Marvin H. White, Anant Agarwal

Institutions: Indian Institute of Technology Bombay, The Ohio State University, Ford Motor Company (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ford Motor Company

OpenAlex ID: W4405104297

FWCI: 0.781

Cites: 6

Cited by: 1

Related to: 10