Work

PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts

Year: 2024

Type: conference-paper

Abstract: We investigate the barrier properties of phosphorus-doped Si-rich silicon carbide (SixCy) thin films deposited by PECVD against Al/Si alloying in the context of poly-Si/SiOx passivating contacts. The stability of the implied open circuit voltage (iVOC) after firing of single-sided, full area screen-printed Al-contacts increases with carbon content of the barrier layer and depends on the crystallization scheme applied to the samples. Crystallized SixCy layers with an atomic C concentration of about 20 at.% deposited on pre-crystallized poly-Si predominantly show no significant decrease in iVOC values for peak firing temperatures up to 725°C.

Source: SiliconPV Conference Proceedings

DOI: 10.52825/siliconpv.v2i.1291

Authors: David Bäurle, Benjamin Gapp, Giso Hahn, Heiko Plagwitz, Barbara Terheiden

Institution: University of Konstanz

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funder: Bundesministerium für Wirtschaft und Klimaschutz

Award: G6254542346