Work

Defect dependent electronic properties of two-dimensional transition metal dichalcogenides (2H, 1T, and 1T′ phases)

Year: 2024

Type: article

Abstract: reduced from 1.43 eV (1.31 eV with SOC) under GGA to a range of 0.98 eV to 0.06 eV, depending on the concentration. Our findings provide guidelines for experimental screening of 2D TMD defects, paving the way for the development of next-generation spintronic, electronic, and optoelectronic devices.

Source: Physical Chemistry Chemical Physics

DOI: 10.1039/d4cp04017a

Authors: Berna Akgenc Hanedar, Mehmet Cengiz Onbaşlı

Institutions: Koç University, Kırklareli University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funders: Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, U.S. Air Force, European Research Council, Air Force Office of Scientific Research

Awards: G4392274218, G457467865, G7477413588