Atomic-Layer-Deposited Al 2 O 3 Layer Inserted in SiO 2 /HfO 2 Gate-Stack-Induced Positive Flat-Band Shift with Dual Interface Dipoles for Advanced Logic Device
Year: 2024
Type: article
Source: ACS Applied Nano Materials
Institutions: Fudan University, State Key Laboratory of ASIC and System
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4405128877