Work

Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor

Year: 2024

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/ad9c44

Authors: Wentao 文韬 Yu 于, Long 龙 Zhao 赵, Yanfei 延飞 Gao 高, Shiping 石平 Gao 高, Yuekun 悦昆 Yang 杨, Chen 晨 Pan 潘, Shi-Jun 世军 Liang 梁, Bin 斌 Cheng 程

Institutions: Nanjing University of Science and Technology, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4405173802

FWCI: 0.192

Cites: 43

Cited by: 2

Related to: 10